SPICE TRANSISTOR PARAMETERS PARAMETER NMOS PMOS UNITS SOURCE

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SPICE Transistor Parameters

SPICE Transistor Parameters


Parameter

NMOS

PMOS

Units

Source

Description

VTO

KP

GAMMA

PHI

LAMBDA

RD

RS

CBD

CBS

IS

PB

CGSO

CGDO

CGBO

RSH

CJ

MJ

CJSW

MJSW

JS

TOX

NSUB

NSS

NFS

TPG

XJ

LD

UO

VMAX

0.7

40E-6

1.1

0.6

0.01

(40)

(40)




0.7

3.0E-10

3.0E-10

5.0E-10

25

4.4E-10

0.5

4.0E-10

0.3

1.0E-5

5.0E-8

1.7E16

0

0

1

6.0E-7

3.5E-7

775

1.0E5

-0.8

12E-6

0.6

0.6

0.03

(100)

(100)




0.6

2.5E-10

2.5E-10

5.0E-10

80

1.5E-4

0.6

4.0E-10

0.6

1.0E-5

5.0E-8

5.0E15

0

0

1

5.0E-7

2.5E-7

250

0.7E5

V

(A/V2)

(V0.5)

V

1/V

ohms

ohms

F

F

A

V

F/m

F/m

F/m

Ohms/sq.

(F/m2)

-

F/m

-

(A/m2)

m

(1/cm3)

(1/cm2)

(1/cm2)

-

m

m

(cm2/Vs)

m/s

(1)

(5)

(1)

(3)

(5)

(2)

(2)

(2)

(2)

(2)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(1)

(3)

(3)

(3)

(1)

(1)

(1)

(1)

-zero bias threshold voltage

-transconductance parameter

-bulk threshold parameter

-surface potential

-channel-length modulation

-drain ohmic resistance (w=6m)

-source ohmic resistance(²)

-zero bias B-D juction cap.

-zero bias B-S juction cap.

-bulk junction sat.current

-bulk junction potential;

-G-S overlap capacitance

-G-D overlap capacitance

-G-bulk overlap capacitance

-diffusion sheet resistance

-zero bias bulk junction cap.

-bulk junction grading coef.

-bulk junction sidewall cap.

-sidewall cap. Grading coef.

-bulk jinction sat.current

-oxide thickness

-substrate doping

-surface state density

-fast surface state density

-type of gate material

-metallurgical junction depth

-lateral diffusion

-surface mobility

-maximum drift velocity


SPICE Level 3 Parameters


Parameter

NMOS

PMOS

Units

Source

Description

THETA

KAPPA

ETA

0.11

1.0

0.05

0.13

1.0

0.3

1/V

-

-

(1)

(1)

(1)

-mobility modulation

-saturation field factor

-static feedback





Other Electrical Parameters

Capacitance

(pF/mm2)

Edge Component

(pF/mm)

Source

Gate (Cox)

Metal1 – Field

Metal1 – Poly

Metal1 – Diffusion

Poly – Field

Metal2 – Field

Metal2 – Diffusion

Metal2 – Poly

Metal2 – Metal1

Capacitor P + - Poly

(0.1%/V linearity)

6.9E-4

2.7E-5

5.0E-5

5.0E-5

6.0E-5

1.4E-5

1.6E-5

2.0E-5

2.5E-5

6.9E-4

0.5E-4

0.4E-4



0.2E-4

2.0E-5




0.5E-4

(1)

(1)

(1)

(1)

(1)

(4)

(4)

(4)

(4)

(*)

(1)


Resistance

(ohms/sq.)

Source

N+ Diffusion

P+ Diffusion

N+ Poly

Capacitor P+

P-well

Metal1

Metal2

3 ´ 3 metal1 – P + Diffusion Contact

3 ´ 3 metal1 – N + Diffusion Contact

3 ´ 3 metal1 – N + Poly Contact

25

80

18

300

4K

0.035

0.030

121

44

25

(1)

(1)

(5)

(1)

(1)

(4)

(4)

(5)

(5)

(5)


Maximum operating voltage: 5 volts.


Sources: (1) D. Smith of NTE, presented at CMC Workshop June 6-7, 1985.

(2) Calculated by SPICE: e.g. –RSH is used to calculate RD & RS.

(3) SPICE default.

(4) D. Smith of NTE, April 1986.

(5) Typical Measured DC result.

(*) Estimate – Capacitors assumed to be equal to gate capacitance.








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